Voltage shifts of Fowler-Nordheim tunneling J-V plots in thin gate oxide MOS structures due to trapped charges - Concepedia

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Voltage shifts of Fowler-Nordheim tunneling J-V plots in thin gate oxide MOS structures due to trapped charges

37

Citations

10

References

1989

Year

Seog-Ju Oh, Y.T. Yeow

Solid-State Electronics

Electrical EngineeringVoltage ShiftsEngineeringPhysicsTunneling MicroscopyStress-induced Leakage CurrentOxide ElectronicsBias Temperature InstabilityApplied PhysicsCondensed Matter PhysicsJ-v PlotsMicroelectronicsThin GateSemiconductor Device

References

	Year	Citations

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