Self-assembled carbon-induced germanium quantum dots studied by grazing-incidence small-angle x-ray scattering

Abstract

We present a structural investigation of buried C-induced Ge quantum dot multilayers grown on (001) Si by molecular-beam epitaxy. Using grazing-incidence small angle x-ray scattering, we determine the shape, the mean radius, height, and dot distance. The dot distribution is isotropic within the (001) interfaces, and no correlation of the dot positions along growth direction was found.