Japanese Journal of Applied Physics · 2003 · 19 citations · 1 references
Natural SciencesMaterials EngineeringMaterials ScienceCrystal StructureElectronic MaterialsSemiconductor MaterialsCrystallization ProcessesKinetics Of Phase TransformationsPhase AnalysisPhase ChangePhase TransitionsSolid-state Phase TransitionsCrystallographic Phase TransitionsDynamic RangePhase-change BehaviorPhase-change MaterialsRecrystallizationRecrystallization KineticsSolid-state CrystallinitySolid-state Crystallization
Eutectic-based InSbTe phase-change materials have been developed for low sigma-to-dynamic range (SDR) multi-level (ML) performance at linear track velocities (LTVs) of 1.9 m/s to 6 m/s. Compositions with the stoichiometry Inx(Sb72Te28)100-x (3.9<x<45) were tested. Compositions that achieved low SDRs did so at 1.9 m/s, 3.5 m/s and 6 m/s. We found two minima in the SDR at concentrations of x=10% and x=30% indium. We explain this unique finding through write-erase characteristics and crystal structure. At indium concentrations lower than 10% and higher than 30%, the favored rhombohedral crystal structure was not the major phase formed, and the SDR increased. The minima in SDR at 10% and 30%, in conjunction with a maximum at 20%, can be explained by fast solid-state crystallization time and slow melt recrystallization time.
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