Solution-Processed Chitosan-Gated IZO-Based Transistors for Mimicking Synaptic Plasticity

Abstract

Indium-zinc-oxide (IZO)-based electric double layer (EDL) transistors gated by solution-processed chitosan electrolyte films are fabricated on glass substrates and used for mimicking synaptic plasticity. The conductance of the self-assembled IZO channel tuned by the proton electrostatic modulation and electrochemical doping is regarded as the synaptic weight. Synaptic behaviors like paired-pulse facilitation and long-term potentiation are mimicked in the chitosan-gated IZO-based EDL transistor. Our results suggest that gate pulse amplitude and number have great influence on the synaptic plasticity transition.