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The Physicochemical Properties and Growth Mechanism of Oxide ( SiO2 − x F x ) by Liquid Phase Deposition with H 2 O Addition Only
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1994
Year
Materials ScienceChemical EngineeringEngineeringLiquid Phase DepositionOxide ElectronicsSurface ScienceLpd OxideChemistryGrowth MechanismLpd MechanismDeposition RateChemical DepositionChemical Vapor DepositionO Addition
Silicon oxide formation was studied by a novel liquid phase deposition (LPD) method with addition only at 35°C. The deposition rate could be controlled by varying the quantity of added. The LPD‐oxide was lightly oxygen‐deficient. FTIR spectra and AES depth profiles indicate that a small amount of fluorine was incorporated into the oxide. The composition of LPD‐oxide can be represented as . The physicochemical properties of LPD oxide were investigated, as was the behavior of fluorine in the oxide and the chemical reaction. A model for the LPD mechanism is proposed that satisfactorily explains all of the experimental phenomena observed.