SiO2 thin-film deposition by excimer laser ablation from SiO target in oxygen atmosphere

Abstract

Silicon dioxide thin films are deposited, for the first time, by reactive laser ablation from a silicon monoxide target in oxygen atmosphere, with a high-power pulsed ArF (λ=193 nm) excimer laser. The specific influence of oxygen in the chamber during the laser processing on the stoichiometry and final properties of the oxide films deposited at ambient temperature is demonstrated.