BeCdSe/(Be,Zn)Se Quantum Well as a New Active Region for Blue-Green II-VI Lasers and Light-Emitting Diodes

Abstract

BexCd1–xSe quantum well structures of different thicknesses (2 to 10 nm) with a Be content ranging from 33% to 50% have been grown for the first time by molecular beam epitaxy using both conventional growth mode and sub-monolayer digital alloying technique. Compositional boundaries of an instability region and energy gap bowing have been refined. Bright photoluminescence up to room temperature and stimulated emission at a liquid nitrogen temperature have been demonstrated. Best optical and structural properties have been observed in the vicinity of x = 0.46 corresponding to a composition lattice-matched to GaAs that permits one to consider these alloys as suitable materials for a QW active region of laser diodes.