Condensation of vapor species at the outlets in high temperature chemical vapor deposition using tetramethylsilane as a precursor for SiC bulk growth

Abstract

High temperature chemical vapor deposition (HTCVD), an alternate method for crystal growth of SiC, was recently deemed to be a safe method when tetramethylsilane (TMS) is used. In this study, we report on the characteristics of condensation of vapor species as a function of geometric location and temperature by analyzing outlet closing in TMS-based HTCVD under the conditions of 2000 °C for 1–2 hours with a Si/H ratio of 6.2 × 10−4. Thermodynamic estimation of the classified reaction zones was experimentally verified by micro-Raman spectroscopy and microscopic inspections.