Structural model for the Si(111)-4<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mo>×</mml:mo></mml:math>1-In reconstruction

Abstract

A $\ensuremath{\pi}$-bonded-chain-stacking-fault $(\ensuremath{\pi}$-SF) model is proposed for the Si(111)4$\ifmmode\times\else\texttimes\fi{}$1-In surface structure. The model incorporates 4$\ifmmode\times\else\texttimes\fi{}$1 Si(111) substrate reconstruction consisting of the sixfold Si rings in the faulted-unfaulted sequence connected through fivefold and sevenfold Si rings. Indium atoms (0.75 ML) reside above sixfold and fivefold Si rings while sevenfold Si rings form $\ensuremath{\pi}$-bonded chains between In ridges.