Applied Physics Letters · 1996 · 55 citations · 0 references
Natural SciencesMaterials SciencePhysicsElectronic MaterialsSemiconductor MaterialsThin FilmsEpitaxial GrowthOxide SemiconductorsSemiconducting MaterialsSemiconductor PhysicsSemiconductor Thin FilmsThin-film MaterialsEpitaxial Film GrowthEpitaxial MaterialsEpitaxial Thin FilmsEpitaxial Thin-film GrowthPulsed Laser DepositionSemiconducting Oxide MaterialsSingle-domain BehaviorTemperature-dependent Electrical Measurements
Epitaxial films of Sr2RuO4 have been grown in situ by pulsed laser deposition on (100) LaAlO3 and (100) LaSrGaO4 substrates. X-ray diffraction results show that the films are single domain and grow c-axis oriented on (100) LaAlO3 and a-axis oriented on (100) LaSrGaO4 substrates. X-ray φ scans indicate epitaxial alignment of the film and substrate in-plane axes in both cases. Resistivity versus temperature measurements reveal that the as-grown c-axis oriented films are semiconducting and the a-axis oriented films are metallic.