632.7 nm CW Operation (20°C) of AlGaInP Visible Laser Diodes Fabricated on (001) 6° off toward [110] GaAs Substrate

Abstract

632.7 nm continuous wave operation was achieved at 20°C, by an AlGaInP visible laser diode (LD) with an AlGaInP quaternary active layer fabricated on a (001) GaAs substrate with a misorientation angle of 6° toward the [110] direction. The epitaxial layers for the laser structure are grown by metalorganic vapor phase epitaxy. The lasing wavelength is almost the same as that for He-Ne lasers. Lasing wavelengths for the LDs were also compared with wavelengths for those fabricated on an exact (001) orientation substrate.