Japanese Journal of Applied Physics · 1984 · 34 citations · 3 references
EngineeringResistivity DistributionSemiconductor DeviceSemiconductorsRf SemiconductorEpitaxial GrowthCompound SemiconductorSemiconductor TechnologyElectrical EngineeringTwo-inch Diameter CrystalsPhysicsCrystalline DefectsThree-electrode Guard MethodSemiconductor MaterialMicroelectronicsSpecific ResistanceApplied PhysicsContour MapElectrical Insulation
Two-dimensional distribution of resistivity in two-inch diameter crystals of LEC semi-insulating GaAs has been studied by the three-electrode guard method. Results are given in the form of a contour map for the wafers before and after annealing. Very significant fluctuations in resistivity on a 280 µm scale are observed for as-grown crystals, although the average of resistivity corresponds inversely to etch pit densities. The homogeneity of crystal grown at an 18 mm/h pulling rate, about two times faster than usual, is remarkably improved by annealing at 850°C for 20 minutes or longer.
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Takao Matsumura, Haruo Emori, Kazutaka Terashima et al. · Japanese Journal of Applied Physics · 1983 · 17 citations
Wide-bandgap Semiconductor, Electrical Engineering, Leakage Current Variations +13