Electrometry on charge traps with a single-electron transistor

Abstract

Background charge fluctuators are studied individually by means of a single-electron transistor with multiple independent gates. Operation of the device in a feedback mode allows electrometric sensing of the charged background and its behavior upon electric potential variations due to geometrically different gates. Pulse height spectra and the hysteresis of charge trapping transitions are discussed as specific signatures of distinct fluctuators. The location of individual traps is determined from the experimental data and based on electrostatic calculations.