Effects of a thin InGaAs layer on InAs quantum dots embedded in InAl(Ga)As

Abstract

Influences of a thin In0.32Ga0.68As layer on the structural and optical properties of self-assembled InAs quantum dots (QDs) embedded in an InAl(Ga)As matrix, which was lattice-matched to an InP substrate, were investigated by atomic force microscopy (AFM), transmission electron microscopy (TEM), and photoluminescence (PL) spectroscopy. AFM and TEM images showed that the size of QDs grown on a thin In0.32Ga0.68As layer was increased, with a reduction in size fluctuation compared to that of QDs on an InAl(Ga)As layer. The shape of the QD was also more isotropic, indicating that the QD would be closer to an ideal zero-dimensional system. The PL peak position of the InAs QDs grown on a 1.5 nm In0.32Ga0.68As layer was 1.55 μm, with linewidth broadening of 64 meV that was somewhat narrower than those of the QD samples without the In0.32Ga0.68As layer, which agreed well with the AFM and TEM results.