Effect of free-carrier screening on the ultrafast relaxation kinetics in hot polar semiconductors

Abstract

The effect of free-carrier screening on the kinetics of evolution of relaxation processes in non- equilibrium photoexcited plasma in polar semiconductors is investigated. We compare numerical results obtained for GaAs under three different assumptions: neglecting screening effects, using a screening factor in the Debye-H\"uckel approximation, and introducing screening effects by means of a dielectric function calculated in the random-phase approximation.