Study of 1/f noise in N-MOSFET's: Linear region

Abstract

A modified McWhorter model has been developed to explain the mechanisms involved in the <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1/f</tex> noise in n-channel metal-oxide, semiconductor field-effect transistors (MOSFET's). Under the assumption of an energy distribution of traps in the bandgap, an expression for the power spectral density of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1/f</tex> noise was derived for MOSFET's operating in the linear region. Experimentally, noise measurements were performed on short-channel enhancement-mode MOSFET's with gate widths of 100 µm, and varying gate lengths of 2 to 10 µm. It was found that noise power increased with increasing drain voltage or decreasing gate bias. Quantitative analyses have been done to compare the experimental results with the model calculations.