Electronics Letters · 2006 · 31 citations · 6 references
EngineeringElectrical EngineeringOptoelectronicsPhotonicsSemiconductor DevicesHigh-frequency Semiconductor DevicesLaser DiodesLaser PhysicsOptical SourcesSemiconductor LasersUltrafast OpticsCarrier Recombination DynamicsIntegrated LasersPulse CompressionPulsed LasersSemiconductor Laser DiodesUltrafast Pulse GenerationUltrashort Pulse Generation
Passive modelocking in one-section monolithic semiconductor laser diodes based on a quantum dash active layer at very high repetition rate (>40 GHz), in the 1.5 µm window, is demonstrated. 800 fs pulse generation, without any pulse compression scheme, at 134 GHz, is reported. A 50 kHz linewidth of the radiofrequency (RF) spectrum at 42 GHz is also demonstrated, the lowest value reported for any semiconductor passively modelocked laser.
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Passive mode-locking in 1.3 μm two-section InAs quantum dot lasers
Xiaodong Huang, A. Stintz, Hua Li et al. · Applied Physics Letters · 2001 · 158 citations
35 GHz mode-locking of 1.3μm quantum dot lasers
M. Küntz, G. Fiol, M. Lämmlin et al. · Applied Physics Letters · 2004 · 87 citations