Visible-blind photodetector based on p–i–n junction GaN nanowire ensembles

Abstract

We report the synthesis, fabrication and extensive characterization of a visible-blind photodetector based on p–i–n junction GaN nanowire ensembles. The nanowires were grown by plasma-assisted molecular beam epitaxy on an n-doped Si(111) substrate, encapsulated into a spin-on-glass and processed using dry etching and metallization techniques. The detector presents a high peak responsivity of 0.47 A W − 1 at − 1 V. The spectral response of the detector is restricted to the UV range with a UV-to-visible rejection ratio of 2 × 102. The dependence on the incident power and the operation speed of the photodetector are discussed.