Advances in Piezoelectrically Actuated RF MEMS Switches and Phase Shifters

Abstract

This report presents results on recent advances in piezoelectric actuated radio frequency (RF) microelectromechanical system (MEMS) devices including a temperature insensitive RF MEMS series switch and the demonstration of a 2-bit MEMS phase shifter incorporating PZT switches. Using lead zirconate titanate (PZT) thin films, modifications to our earlier designs resulted in a RF MEMS series switch operating at 10 V from -25degC to 100degC with better than 30 dB isolation and insertion loss less than 0.5 dB from DC to 50 GHz. In addition, a 17 GHz, 2-bit reflection phase shifter has been demonstrated with an average insertion loss of 2.96 dB using PZT shunt switches operating at 15 V.