IEEE Journal of Quantum Electronics · 2006 · 12 citations · 17 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsPhotonicsSemiconductor DevicesLaser DiodesLaser OpticsLaser PhysicsOptical Properties Of SemiconductorsOptical SourcesSemiconductor LasersCurrent DensityLaser ThresholdOptical Gain In SemiconductorsPower OutputQuantum Cascade Lasers
The influence of injector doping concentration N <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">inj</sub> on the performance of InP-based quantum-cascade (QC) lasers is investigated for devices emitting around 9.2-mum wavelength and injector doping concentrations between 1times10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">17</sup> cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-3</sup> and 3times10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">17</sup> cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-3</sup> . The threshold current density, the dynamic range, the maximum emitted output power as well as the maximum operating temperature are found to increase with increasing N <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">inj</sub> . All in all, there exists no optimal value of N <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">inj </sub> per se. In fact, the injector doping concentration has to be adjusted individually depending whether emphasis is placed on obtaining low threshold current densities or on high-power operation
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Jérôme Faist, Federico Capasso, Deborah L. Sivco et al. · Science · 1994 · 4.5K citations
Continuous Wave Operation of a Mid-Infrared Semiconductor Laser at Room Temperature
Mattias Beck, Daniel Hofstetter, T. Aellen et al. · Science · 2002 · 779 citations