Preparation and characterization of some <i>A</i>I<i>B</i>II<i>C</i>V type semiconductors

Abstract

Crystals of LiZnP, LiCdP, and LiZnAs are prepared by direct fusion of constituent elements. All three materials are found to be p-type semiconductors. Absorption edge and photoconductivity spectra are measured. Band gaps are estimated to be 1.25 eV for LiZnAs, 1.3 eV for LiCdP, and 2.1 eV for LiZnP.