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Characterization of CuIn(Ga)Se2 Thin Films
73
Citations
19
References
1998
Year
Materials ScienceSemiconductorsFree-exciton TransitionIi-vi SemiconductorEngineeringElectronic MaterialsPhysicsTransition Metal ChalcogenidesExcitonic Band GapApplied PhysicsCondensed Matter PhysicsQuantum MaterialsSe2 Thin FilmsSemiconductor MaterialThin FilmsLayered MaterialThin Film ProcessingSemiconductor Nanostructures
Cu- and In-rich CuIn(Ga)Se2 thin films are investigated by magneto-optical spectroscopy in absorption and emission. These experiments reveal that the free-exciton transition is at 1.044 eV (1.5 K). The excitonic band gap was found to decrease with a slope of 7 meV/100 K between 100 and 300 K. Donor–acceptor pair recombinations located at 0.96 and 0.90 eV were found to originate from moderately deep donors in connection with shallow, effective mass-like acceptors, and deep acceptors, respectively.
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