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Voronoi network model of ZnO varistors with different types of grain boundaries
79
Citations
19
References
1996
Year
Voronoi Network ModelEngineeringZinc Oxide VaristorsDifferent TypesCharge TransportSemiconductor DeviceSemiconductorsElectronic DevicesGrain BoundariesNanoelectronicsQuantum MaterialsCharge Carrier TransportSemiconductor TechnologyElectrical EngineeringPhysicsOxide ElectronicsOxide SemiconductorsMicroelectronicsPoor NonlinearityApplied PhysicsCondensed Matter Physics
Electrical transport in zinc oxide varistors is simulated using two-dimensional Voronoi networks. The networks are assumed to contain randomly distributed grain boundaries of three electrical types: (1) high nonlinearity (i.e., ‘‘good’’) junctions; (2) poor nonlinearity (i.e., ‘‘bad’’) junctions; and (3) linear with low-resistivity (i.e., ohmic) junctions. These type classifications are those found in experimental measurements. By varying the type concentrations, the simulated current density versus electric field (J–E) characteristics can be made to conform to the different experimentally observed characteristics of ZnO varistors. These characteristics include the sharpness of switching at the transition between ohmic and nonlinear J–E response (i.e., knee region), as well as the degree of nonlinearity. It is shown that the reduction of the nonlinearity coefficient of bulk varistors, relative to that of isolated grain boundaries, can be explained only by the presence of ‘‘bad’’ varistor junctions.
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