Performance evaluation of SiC power MOSFETs for high-temperature applications

TLDR

This study evaluates the high‑temperature performance of commercial SiC power MOSFETs beyond the datasheet‑specified 125 °C junction limit. The authors measured static and switching characteristics up to 200 °C and performed gate biasing and switching tests to assess gate‑oxide reliability at elevated temperatures. Results demonstrate that SiC MOSFETs maintain superior electrical performance at high temperatures, yet exhibit degradation under extreme temperatures and gate voltages, revealing a trade‑off between performance and reliability.

Abstract

In this paper, the high-temperature performance of the commercial SiC power MOSFETs has been extensively evaluated beyond 125 °C - the maximum junction temperature according to the datasheet. Both the static and switching characteristics have been measured under various temperatures up to 200 °C. The results show the superior electrical performance of the SiC MOSFETs for high-temperature operation. Meanwhile, the gate biasing and gate switching tests have also been conducted to test the gate oxide reliability of these devices under elevated temperatures. The test results reveal the degradation in the device characteristics under high temperature and different gate voltage conditions, which exhibit the trade-off between the performance and the reliability of SiC MOSFETs for high-temperature applications.