IEEE Transactions on Nuclear Science · 1966 · 19 citations · 4 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsOptoelectronicsSemiconductor DevicesOptoelectronic DevicesOptoelectronic MaterialsPhotodetectorsQuantum OptoelectronicsDynamic RangeGainMultiplier DesignPhotocathodesPhotoconductive GainPhotodetection
A phototube has been developed with a semiconductor diode as the multiplier element. The tube has an electron gain of 1200 at 5 keV and has a linear output current in the 6-A range with a dynamic range between 107 and 108. A description is given of the fabrication of the shallow-diffused p-n junction diodes and their use in sealed envelopes with a cesium-antimonide photocathode. Also included is a discussion of the electrostatic lens for focusing the photoelectron beam to the window of the diode, and of the overall operation of the tube.
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Early History of Industrial Electronics
W.A. White · Proceedings of the IRE · 1962 · 65 citations
Electron beam switched P-N junctions
A.V. Brown · IEEE Transactions on Electron Devices · 1963 · 28 citations