Metal-semiconductor field-effect transistors fabricated in GaAs layers grown directly on Si substrates by molecular beam epitaxy

Abstract

Device-quality GaAs layers have been grown directly on Si(100) substrates by molecular beam epitaxy. Metal-semiconductor field-effect transistors have been fabricated in these layers with transconductance as high as 85 mS/mm and leakage current as low as 1 μA at Vgs =−3 V for gate dimensions of 2.0 μm×200 μm.