Quasi-heteroepitaxial growth of β-Ga2O3 on off-angled sapphire (0 0 0 1) substrates by halide vapor phase epitaxy - Concepedia

Concepedia

Publication | Open Access

Quasi-heteroepitaxial growth of β-Ga2O3 on off-angled sapphire (0 0 0 1) substrates by halide vapor phase epitaxy

DOI Full Paper Access

113

Citations

19

References

2014

Year

Yuichi Oshima, Encarnación G. Vı́llora, Kiyoshi Shimamura

Journal of Crystal Growth

Materials EngineeringQuasi-heteroepitaxial GrowthOxide HeterostructuresMaterials ScienceOff-angled SapphireEngineeringCrystal Growth TechnologyApplied PhysicsMolecular Beam EpitaxyEpitaxial Growth

References

	Year	Citations

Page 1