Compact Modeling of Perpendicular-Anisotropy CoFeB/MgO Magnetic Tunnel Junctions

TLDR

MTJs with perpendicular magnetic anisotropy are sought for high‑density, thermally stable nonvolatile memory and logic chips. This work introduces a compact model for CoFeB/MgO PMA MTJs that exhibit the best tunnel magnetoresistance and switching performance. The model integrates static, dynamic, and stochastic physical behaviors and incorporates experimental parameters to match measurements. Simulations show high‑speed, low‑power switching and validate the model’s relevance and efficiency for 65‑nm MTJ/CMOS memory and logic chip design.

Abstract

Magnetic tunnel junctions (MTJs) composed of ferromagnetic layers with perpendicular magnetic anisotropy (PMA) are of great interest for achieving high-density nonvolatile memory and logic chips owing to its scalability potential together with high thermal stability. Recent progress has demonstrated a capacity for high-speed performance and low power consumption through current-induced magnetization switching. In this paper, we present a compact model of the CoFeB/MgO PMA MTJ, a system exhibiting the best tunnel magnetoresistance ratio and switching performance. It integrates the physical models of static, dynamic, and stochastic behaviors; many experimental parameters are directly included to improve the agreement of simulation with experimental measurements. Mixed simulation based on the 65-nm technology node of a magnetic flip-flop validates its relevance and efficiency for MTJ/CMOS memory and logic chip design.