Publication | Closed Access

Dynamic prediction of point defects in Czochralski silicon growth. An attempt to reconcile experimental defect diffusion coefficients with the criterion

Materials ScienceMaterials EngineeringPoint DefectsEngineeringPhysicsIntrinsic ImpurityApplied PhysicsDefect FormationSemiconductor Device FabricationDynamic PredictionSilicon On InsulatorDefect ToleranceCzochralski Silicon GrowthMicroelectronics