Amorphous silicon produced by a new thermal chemical vapor deposition method using intermediate species SiF2

Abstract

Amorphous silicon (a-Si) films are deposited at about 320 °C by a new thermal chemical vapor deposition method. In this method, the gas mixture of intermediate species SiF2 and H2, decomposed thermally by the catalytic reaction, is used as a material gas. It is found that the photosensitivity of the a-Si film for AM1 of 100 mW/cm2 exceeds over 106 and that the spin density is as low as 1.5×1016 cm−3 for the film deposited with a rate of several Å/s.