Properties of II–VI semiconductors associated with moving dislocations

Abstract

Abstract Moving dislocations in II–VI semiconductors carry a large electric charge. This charge is not in thermal equilibrium, but is due to the sweeping up of electrons from point defects. Its movement produces a dislocation current during plastic deformation, and conversely, the application of an external field changes the flow stress. This paper reviews the structure and properties of these dislocations, the theory of their charge and the phenomena which are a consequence of the strong mutual interactions of the dislocation and electronic sub-systems in these crystals. The materials show a large photoplastic effect (a change in flow stress under illumination), and related effects due to the injection of electrons at an electrode. Deformation produces reversible changes in the conductivity, pulsed and continuous luminescence and the emission of electrons from the surface.