Modified-Lely SiC Crystals Grown in [11-00] and [112-0] Directions

Abstract

This study has concentrated on the sublimation growth of SiC in directions perpendicular to the c-axis. 6H- and 4H-SiC crystals are grown in the [11-00] and [112-0] directions by the modified-Lely growth method. The crystals are different in many aspects from those grown in the conventional 〈0001〉 directions. The polytypic structure of crystals grown in the [11-00] and [112-0] directions perfectly succeeds to that of the seed, and thus polytype mixing never occurs. The crystals contain no hollow core dislocations (micropipes) and exhibit a characteristic strain relaxation. A number of stacking faults in the basal plane are introduced during growth, and the density of the stacking faults strongly depends on the crystal growth direction and polytype. We discuss the defect formation process during the [11-00] and the [112-0] growth and present an atomistic model for the stacking fault generation.