Experimental Verification of the Surface Quantization of an<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>n</mml:mi></mml:math>-Type Inversion Layer of Silicon at 300 and 77°K

Abstract

The quantization of the motion, perpendicular to the surface, of electrons in an inversion layer at the surface of a silicon substrate is experimentally verified by accurate capacitance measurements at 77 and 300 \ifmmode^\circ\else\textdegree\fi{}K. From the measurements the average distance of the electrons from the interface can be derived. To obtain agreement with the calculated value, the quantization has to be taken into account.