Doped microcrystalline silicon growth by high frequency plasmas

Abstract

The growth of boron- and phosphorus-doped microcrystalline silicon films on glass using plasma enhanced chemical vapor deposition at high rf frequencies was examined for substrate temperatures from room temperature to 400 °C. Microcrystalline growth was obtained by heavy hydrogen dilution of silane with phosphine or trimethylboron as the doping gas. A maximum conductivity of 8 (Ω cm)−1 was obtained at a substrate temperature of 180 °C for p-type films and 74 (Ω cm)−1 at 210 °C for n-type films.