Vaporization-Crystallization Method for Growing CdS Single Crystals

Abstract

A self-refining method for growing three different forms of CdS single crystals is described together with fabrication details of the 1300-watt three-temperature zone furnace employed. The growth chamber measuring 1¾ in. in diam×21 in. long is charged with CdS powder and either H2S or argon at a pressure of 1 atmosphere or less, and subjected from 4 to 7 days to different temperatures (1250±2°C maximum) and gradients depending on the type of crystal desired. Single crystals vary from thin plates, rods, and whiskers weighing fractions of a gram to 10-g polygonal chunks. The method is believed to be suitable for growing single crystals of many other elemental and compound semiconductors.