Properties of high k gate dielectric gadolinium oxide deposited on Si (1 0 0) by dual ion beam deposition (DIBD) - Concepedia

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Properties of high k gate dielectric gadolinium oxide deposited on Si (1 0 0) by dual ion beam deposition (DIBD)

DOI Full Paper Access

45

Citations

17

References

2004

Year

Jianping Zhou, Chunlin Chai, Shaoyan Yang, Zhikai Liu, Shulin Song, Yanli Li, Nuofu Chen

Journal of Crystal Growth

Materials ScienceMaterials EngineeringElectrical EngineeringEngineeringNanoelectronicsOxide ElectronicsApplied PhysicsGallium OxideSemiconductor Device FabricationMolecular Beam EpitaxySilicon On InsulatorMicroelectronics

References

	Year	Citations

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