Philosophical magazine · 1974 · 22 citations · 12 references
Natural SciencesMaterials EngineeringMaterials ScienceCrystal StructureElectronic MaterialsAb Initio MethodsDefects In Electronic MaterialsSemiconductor DefectsStacking FaultsIntrinsic Stacking FaultsPseudopotential ModelsPseudopotentialsSecond-order Perturbation TheoryStacking Fault EnergyStacking Faults In Semiconductors
Abstract A calculation of the intrinsic stacking fault energy in silicon has been carried out to second order perturbation in the pseudopotential formalism. The calculated result is 55 erg/cm2, which is in remarkably good agreement with the experimental value.
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A new method for the electronic structure of metals
Volker Heine, I. V. Abarenkov · Philosophical magazine · 1964 · 776 citations
Stacking Fault Energy in Silicon
E. Aerts, P. Delavignette, R. Siems et al. · Journal of Applied Physics · 1962 · 198 citations
Natural Sciences, Materials Engineering, Materials Science +15