Epitaxial growth of high quality BAlGaN quaternary lattice matched to AlN on 6H–SiC substrate by LP-MOVPE for deep-UV emission - Concepedia

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Epitaxial growth of high quality BAlGaN quaternary lattice matched to AlN on 6H–SiC substrate by LP-MOVPE for deep-UV emission

29

Citations

5

References

2002

Year

Takayoshi Takano, Makoto Kurimoto, Jun Yamamoto, Hideo Kawanishi

Journal of Crystal Growth

Materials EngineeringMaterials ScienceAluminium NitrideEngineeringDeep-uv EmissionApplied PhysicsAluminum Gallium NitrideMolecular Beam EpitaxyEpitaxial GrowthCompound Semiconductor

References

	Year	Citations

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