Epitaxial oxide growth on polar (111) surfaces

Abstract

Obtaining atomically smooth surfaces and interfaces of perovskite oxide materials on polar (111) surfaces presents a particular challenge as these surfaces and interfaces will reconstruct. Here, the effect of the use of screening buffer layers on the epitaxial growth on such polar surfaces is investigated. Both transmission electron microscopy and in situ reflective high energy electron diffraction data imply that the buffer layers, SrRuO3 or LaAlO3, restore a near bulk-like termination at growth temperature, allowing for coherent growth of BiFeO3 and CaTiO3 for all deposited unit cell layers of the film material.