Applied Physics Letters · 2012 · 69 citations · 26 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsOptical MaterialsOptoelectronicsLuminescent MaterialsOptoelectronic DevicesOptoelectronic MaterialsOrganic SemiconductorsOxide SemiconductorsSolar CellsBand GapHeterojunction DevicesHeterostructure OptoelectronicsLocalized StatesOptical Band GapValence BandValence Band StructureVisible Radiation
Photoresponse of n-type indium-doped ZnO and a p-type polymer (PEDOT:PSS) heterojunction devices are studied, juxtaposed with the photoluminescence of the In-ZnO samples. In addition to the expected photoresponse in the ultraviolet, the heterojunctions exhibit significant photoresponse to the visible (532 nm). However, neither the doped ZnO nor PEDOT:PSS individually show any photoresponse to visible light. The sub-bandgap photoresponse of the heterojunction originates from visible photon mediated e-h generation between the In-ZnO valence band and localized states lying within the band gap. Though increased doping of In-ZnO has limited effect on the photoluminescence, it significantly diminishes the photoresponse. The study indicates that optimally doped devices are promising for the detection of wavelengths in selected windows in the visible.
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Mechanisms behind green photoluminescence in ZnO phosphor powders
K. Vanheusden, W. L. Warren, C. H. Seager et al. · Journal of Applied Physics · 1996 · 3.7K citations
Natural Sciences, Materials Engineering, Materials Science +17
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