Distributed inductance and resistance per‐unit‐length formulas for VLSI interconnects on silicon substrate

Abstract

Abstract A new analytic model is presented (the model is based on the induced current density distribution inside silicon substrate) to calculate the frequency‐dependent distributed inductance and the associated distributed series resistance of silicon semiconducting VLSI interconnects. The validity of the proposed model has been checked by a comparison with CAD‐oriented modeling methodology in conjunction with a quasi‐TEM spectral‐domain approach. It is found that the silicon semiconducting substrate skin effect must be considered for the accurate prediction of the high‐frequency characteristics of VLSI interconnects. © 2001 John Wiley & Sons, Inc. Microwave Opt Technol Lett 30: 302–304, 2001.