A 1.3 µm InGaAsP/InP Multiquantum Well Laser Grown by LPE

Abstract

We have successfully achieved a 1.3 µm InGaAsP/InP BH laser with multiquantum well active layers grown by low-temperature LPE technique ( T g =589°C). The thickness of thin epitaxial layers was less than de Broglie wavelength. The laser has a threshold current of 19 mA, an external differential quantum efficiency of ∼40%, and T 0 value of ∼145 K in the range from -5°C to 20°C and ∼60 K from 20°C to 70°C.