Growth dynamics and electric properties of PbTi_0.1Zr_0.9O₃ceramics doped with cerium oxide

Abstract

The sintered rhombohedral PbTi0.1 Zr0.9 O3(PZT) ceramics with doped CeO2were prepared and investigated by means of XRD, SEM, EDX, and dielectric property measurement. It is found that a 0.4% CeO2doping has two major effects on the growth dynamics and electric properties of the PZT materials. First, the grain size, morphology flatness and growth rate are enhanced by four to eight times. Second, the Curie temperature of the PZT is lowered by about 40 °C as compared to the undoped PZT samples. It is also found that the cerium is richer at the grain boundaries and precipitates in a glass-like phase that fills the gap between grain boundary. A possible mechanism for the driving force is discussed.