New Advances on Heterogeneous Integration of III–V on Silicon

TLDR

Hybrid III–V/Si lasers and semiconductor optical amplifiers fabricated by wafer bonding have recently advanced. Hybrid optical amplifiers deliver 28 dB internal gain, 9 dBm saturation power, and 10–11 dB noise factor; they enable lossless optical packet/burst switching, support single‑mode, 30 nm tunable lasers via silicon ring resonators, achieve 60 km 10 Gb/s transmission, and enable 21.4 Gb/s modulation across 12 wavelengths with improved E/O bandwidth.

Abstract

Recent advances on hybrid III–V/Si lasers and semiconductor optical amplifiers using wafer bonding are reported. Hybrid optical amplifiers exhibit 28 dB internal gain, 9 dBm saturation power in the output silicon waveguide, and 10–11 dB of internal noise factor. Moreover, using optical amplifiers as optical gates, we demonstrate a successful switching operation of optical packet/burst without penalties compared to classical optical amplifiers. The hybrid silicon lasers allow single mode operation and wavelength tunability over 30 nm by exploiting silicon ring resonators thermo-optical effect. Moreover transmission over 60 km single-mode fiber at 10 Gb/s from a directly modulated III–V on Silicon hybrid laser is also demonstrated. Finally, we achieved 21.4 Gb/s modulation over 12 wavelengths using a high-speed directly modulated silicon hybrid laser with improved E/O bandwidth.