12 W continuous-wave diode lasers at 1120 nm with InGaAs quantum wells

Abstract

Highly strained InGaAs quantum wells were grown by metalorganic vapor-phase epitaxy. By lowering the growth temperature to 530 °C, a maximum photoluminescence wavelength of 1192 nm was achieved. High-power diode lasers with a maximum lasing wavelength of 1175 nm were fabricated. A continuous-wave output power of 12 W at a heat-sink temperature of 25 °C was obtained at a lasing wavelength of 1120 nm.