Al<i>x</i>Ga1−<i>x</i>As–GaAs metal–oxide semiconductor field effect transistors formed by lateral water vapor oxidation of AlAs

Abstract

Data are presented demonstrating a GaAs-based metal–oxide semiconductor field effect transistor employing in the gate region a laterally formed native oxide of AlAs. The gate oxide, formed by a water vapor process, is similar to that used successfully in recently developed semiconductor laser devices. The transistors described here represent an extension of the ‘‘wet’’ oxidation Al-based III–V native oxide technology employed successfully in light-emitting and laser devices.