Fluorine-doped tin dioxide thin films prepared by chemical vapor deposition

Abstract

Transparent conductive tin dioxide thin films were prepared by a low-temperature atmospheric-pressure chemical vapor deposition method in air. The raw material was tin(II) trifluoroacetate. At a reaction temperature above 250 °C, polycrystalline thin films were obtained with a high deposition rate. This chemical vapor deposition method effectively incorporates F atoms into a crystalline structure and consequently maximizes the carrier concentration, yielding fluorine-doped SnO2 films of very low resistivity. For the 1260-nm-thick film deposited at 400 °C, the resistivity was 5.92×10−4 Ω cm, and the sheet resistance was 4.69 Ω/⧠. The deposition condition, structure, and characteristics of films were compared to the corresponding values in the chemical vapor depositions of SnO2 from tin(II) acetate.