The direct measurement of the 3 3P0-3 3P1 fine-structure interval and the gJ-factor of atomic silicon by laser magnetic resonance

Abstract

view Abstract Citations (25) References (16) Co-Reads Similar Papers Volume Content Graphics Metrics Export Citation NASA/ADS The direct measurement of the 3 3P0-3 3P1 fine-structure interval and the gJ-factor of atomic silicon by laser magnetic resonance Inguscio, M. ; Evenson, K. M. ; Beltran-Lopez, V. ; Ley-Koo, E. Abstract Laser magnetic resonance measurements have been performed on the ground 3p2 3P multiplet of atomic silicon. The J = 1<-0 fine-structure interval and the g-factor of the 3P1 state have been determined with high precision. The results are: ΔE(3P1-3P0) = 2,311,755.6(7) MHz and gJ(3P1) = 1.500830(70). Single-configuration calculations of gJ(3P1) and gJ(3P2), with accurate Hartree-Fock wave functions, were performed. Publication: The Astrophysical Journal Pub Date: March 1984 DOI: 10.1086/184240 Bibcode: 1984ApJ...278L.127I Keywords: Atomic Spectra; Fine Structure; Laser Spectroscopy; Magnetic Resonance; Silicon; Atomic Energy Levels; Cosmochemistry; Far Infrared Radiation; Zeeman Effect; Atomic and Molecular Physics full text sources ADS |