Journal of Applied Physics · 2008 · 47 citations · 28 references
EngineeringElectrical EngineeringPhysicsMicroelectronicsNanotechnologySemiconductor DevicesDevice ModelingDevice SimulationHigh-frequency Semiconductor DevicesNanoelectronicsSemiconductor PhysicsTerahertz PhotonicsCutoff FrequencyNanostructure CharacterizationPhoton Detection SensitivitySelectivityTerahertz DetectionTerahertz DetectorsTerahertz NanoelectronicsTerahertz Semiconductor Devices
By using a two-dimensional ensemble Monte Carlo method, we have studied the terahertz-frequency response of a self-switching device (SSD), which is a semiconductor rectifier consisting of an asymmetric nanochannel. The simulations reveal that the performance can be improved by adjusting the shape and dielectric material filling of the insulating trenches that define the SSD. We show that the rectified current of the SSD has a nonmonotonic frequency dependence with a pronounced peak occurring just below the cutoff frequency. Through optimizations of the geometry, the peak current can reach twice that at low frequencies, enabling not only a higher detection sensitivity but also a degree of frequency selectivity. The effect is discussed in terms of a localized surface plasma oscillation in the asymmetric nanostructure.
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Cutting-edge terahertz technology
Masayoshi Tonouchi · Nature Photonics · 2007 · 6.2K citations
Jérôme Faist, Federico Capasso, Deborah L. Sivco et al. · Science · 1994 · 4.5K citations
Surface Plasmons in Thin Films
E. N. Economou · Physical Review · 1969 · 1.4K citations