Optical investigations of GaAs-GaInP quantum wells and superlattices grown by metalorganic chemical vapor deposition

Abstract

Recent experimental results on the photoluminescence and photoluminescence excitation of GaAs-Ga0.51In0.49P lattice-matched quantum wells and superlattices are discussed. The full width at half maximum of a 10-period GaAs-GaInP superlattice with Lz=90 Å and LB=100 Å is 4 meV at 4 K. The photoluminescence excitation exhibits very sharp peaks attributed to the electron to light-hole and electron to heavy-hole transitions. The GaInP-GaAs interface suffers from memory effect of In, rather than P or As elements.